Search Results - avinash kashyap

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Methodology for Modeling and Parameter Extraction of LDMOS Devices Under Cryogenic Conditions
Technology # 10-30A new model and parameter extraction methodology has been developed for LDMOS-based circuits that will accurately predict the response of LDMOS circuits even when subjected to the effects of extreme cold. The new model of LDMOS circuits can accurately predict the drain current of the LDMOS IC down to a temperature of 100 Kelvin. The...
Published: 3/5/2014   |   Inventor(s): Avinash Kashyap, Homer Mantooth
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Category(s): Electronic & Photonic Devices, Information Technology, All
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